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IXTA80N10T
IXTP80N10T
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-263 (IXTA) Outline
g fs
C iss
C oss
C rss
V DS = 10V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
33
55
3040
420
90
S
pF
pF
pF
t d(on)
t r
t d(off)
t f
Q g(on)
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 10A
R G = 15 Ω (External)
31
54
40
48
60
ns
ns
ns
ns
nC
1. Gate
2. Drain
3. Source
Q gs
V GS = 10V, V DS = 0.5 ? V DSS , I D = 25A
21
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Q gd
15
nC
A
b
4.06
0.51
4.83
0.99
.160
.020
.190
.039
R thJC
R thCS
0.50
0.65
° C/W
° C/W
b2
c
c2
D
1.14
0.40
1.14
8.64
1.40
0.74
1.40
9.65
.045
.016
.045
.340
.055
.029
.055
.380
D1
E
E1
e
L
L1
L2
8.00
9.65
6.22
2.54
14.61
2.29
1.02
8.89
10.41
8.13
BSC
15.88
2.79
1.40
.280
.380
.270
.100
.575
.090
.040
.320
.405
.320
BSC
.625
.110
.055
Source-Drain Diode
L3
L4
1.27
0
1.78
0.13
.050
0
.070
.005
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-220 (IXTP) Outline
I S
I SM
V SD
t rr
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = 25A, V GS = 0V, Note 1
I F = 25A, -di/dt = 100A/ μ s
100
80
220
1.1
A
A
V
ns
V R = 50V, V GS = 0V
Notes 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
Pins:
1 - Gate
3 - Source
2 - Drain
4 - Drain
2. On through-kole packages R DS(on) Kelvin test contact location
must be 5 mm or less from the package body.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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